Within the realm of contemporary microelectronics, the Fin-shaped Field Effect Transistor (FinFET) serves as a major competitor. By virtue of its one-of-a-kind structure, it is possible to scale the device down to the sub-nanometer domain and to imitate the electrical properties of a MOSFET thereby achieving reduce SCEs and improved performance. Using gallium arsenide (GaAs) as the metal gate (MG) and lanthanum aluminum oxide (LaAlO3) as the high-k (HK) dielectric material, this study offers an analytical model of drain to source current (Ids) for a FinFET at 7nm Technology node. Electrical parameters are examined by solving three-dimensional (3-D) Poisson's equation using continuity equations. Validation of the resulting analytical model is performed using 7nm FinFET simulations using HK-MG approach. All of the aforementioned models are subjected to temperature changes ranging from 275k to 450k in order to explore the influence that HK-MG gate dielectrics have on short channel effects (SCEs). The analytical model and the results of the simulations that resulted are used to calculate the temperature sensitivity (ST(max) = 22mV/kelvin) and the temperature coefficient of resistance (TCR max = 3.3 mppm/kelvin).